2009-12-02 bfp420 1 1 2 3 4 npn silicon rf transistor ? for high gain low noise amplifiers ? for oscillators up to 10 ghz ? noise figure f = 1.1 db at 1.8 ghz outstanding g ms = 21 db at 1.8 ghz ? transition frequency f t = 25 ghz ? gold metallization for high reliability ? sieget ? 25 ghz f t - line ? pb-free (rohs compliant) package 1) ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfp420 ams 1=b 2=e 3=c 4=e - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4.5 4.1 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 35 ma base current i b 3 total power dissipation 2) t s 107 c p tot 160 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb
2009-12-02 bfp420 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 260 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 15 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 20 ma, v ce = 4 v, pulse measured h fe 60 95 130 - 1 for calculation of r thja please refer to application note thermal resistance
2009-12-02 bfp420 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 2 ghz f t 18 25 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.15 0.3 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.37 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.55 - noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt f - 1.1 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db insertion power gain v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? | s 21 | 2 14 17 - third order intercept point at output 2) v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 22 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 12 - 1 g ms = | s 21 / s 12 | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2009-12-02 bfp420 4 simulation data for spice-model as well as for s-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models . please consult our website and download the latest version before actually starting your design. the simulation data have been generated and verified up to 10 ghz using typical devices. the bfp420 nonlinear spice-model reflects the typical dc- and rf-device performance with high accuracy.
2009-12-02 bfp420 5 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 20 40 60 80 100 120 140 160 mw 200 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 1 2 v 4 v cb 0 0.05 0.1 0.15 0.2 pf 0.3 c cb
2009-12-02 bfp420 6 transition frequency f t = ? ( i c ) f = 2 ghz v ce = parameter in v 0 5 10 15 20 25 30 ma 40 i c 0 2 4 6 8 10 12 14 16 18 20 22 24 ghz 30 f t 2 to 4 1.5 1 0.75 0.5 power gain g ma , g ms , | s 21 |2 = ? ( f ) v ce = 2 v, i c = 20 ma 0 1 2 3 4 5 6 0 4 8 12 16 20 24 28 32 36 40 44 f [ghz] g [db] g ms g ma |s 21 | 2 power gain g ma , g ms = ? ( i c ) v ce = 2v f = parameter in ghz 0 4 8 12 16 20 24 28 32 ma 40 i c 0 2 4 6 8 10 12 14 16 18 20 22 24 db 30 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ? ( v ce ) i c = 20 ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 3.5 v 4.5 v ce 0 2 4 6 8 10 12 14 16 18 20 22 24 db 30 g 0.9 1.8 2.4 3 4 5 6
2009-12-02 bfp420 7 noise figure f = ? ( i c ) v ce = 2 v, z s = z sopt 0 4 8 12 16 20 24 28 32 ma 38 i c 0 0.5 1 1.5 2 2.5 3 db 4 f f = 6 ghz f = 5 ghz f = 4 ghz f = 3 ghz f = 2.4 ghz f = 1.8 ghz f = 0.9 ghz noise figure f = ? ( i c ) v ce = 2 v, f = 1.8 ghz 0 4 8 12 16 20 24 28 ma 36 i c 0 0.5 1 1.5 2 db 3 f zs = 50 ohm zs = zsopt noise figure f = ? ( f ) v ce = 2 v, z s = z sopt 0 1 2 3 4 ghz 6 f 0 0.5 1 1.5 2 db 3 f ic = 20 ma ic = 5 ma source impedance for min. noise figure vs. frequency v ce = 2 v, i c = 5 ma / 20 ma 100 +j10 -j10 50 +j25 -j25 25 +j50 -j50 10 +j100 -j100 0 3ghz 4ghz 5ghz 0.45ghz 0.9ghz 1.8ghz 2.4ghz 6ghz
2009-12-02 bfp420 8 package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2009-12-02 bfp420 9 edition 2009-12-02 published by infineon technologies ag 85579 neubiberg, germany ? infineon technologies ag 2009. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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